Towards a method to deploy systems engineering processes within companies

Systems Engineering (SE) approach is a tried and tested approach that promotes and coordinates all appropriate processes to design, develop and test a system. These SE processes have been defined in many standards which are not always consistent with each other and often provide only generic indications. Therefore, companies seeking to apply the SE approach must answer themselves the following questions: how to tailor these generic processes to their company? What methodology must be applied to deploy SE processes? How to ensure the success of this deployment? The purpose of this paper is to present the two main principles of a SE processes deployment methodological approach currently under development and applied to a helicopter manufacturer. These principles are: 1) The description of the set of activities necessary for the deployment, 2) The main concepts necessary to the approach, gathered and shortly formalised in a global meta-model

Mixing Systems Engineering and Enterprise Modelling principles to formalize a SE processes deployment approach in industry

12 pagesInternational audienceSystems Engineering (SE) is a tried and tested methodological approach to design and test new products. It acts as a modelbased engineering approach and promotes for this purpose a set of standardized collaborative processes, modelling languages and frameworks. In a complementary way, Enterprise Modelling (EM) provides concepts, techniques and means to model businesses along with their processes. The purpose of this paper is to provide a method for the deployment of SE processes considering interoperability and building bridges between SE and EM. An application case is given illustrating the definition of the stakeholder requirements definition process defined in the ISO 15288:2008

Customizable Interoperability Assessment Methodology To Support Technical Processes Deployment In Large Companies

International audienceIncreasing competition on markets induces a vital need for companies to improve their efficiency and reactivity. For this, a solution is to deploy, improve and manage their processes while paying a special attention on the abilities of the resources those involve. Particularly, the interoperability of the latter is considered in this article as a challenge conditioning the success of the deployment. Consequently, this paper presents a methodology to assess interoperability of people, material resources and organisation units involved or that could be involved in a process, all along the deployment effort. This methodology is usable for prevention, detection and correction of interoperability problems

Application of an Enterprise Modelling approach to deploy Systems Engineering processes in large organizations

Enterprise Modelling (EM) enables the representation of companies' activities, of their resources along with their roles and responsibilities in order to share the company's knowledge and support performance analysis. For this, EM promotes various concepts, techniques, frameworks, modelling languages and tools today widely used in companies. Currently, even a partial model of an enterprise constitutes a way to communicate, to share advices, to analyse and to make decisions. Therefore, EM appears to be a privileged tool to support any business change management. In a complementary way, Systems Engineering (SE) is a tried and tested methodological approach to design and test new products whatever their complexity or nature. Nowadays SE is considered in industry as a competitive and structured approach enabling a company to manage design activities and more generally to improve its capacity and ability to design complex systems efficiently. SE acts as a model-based engineering approach and promotes to this end a set of standardized collaborative processes, modelling languages and frameworks. Thus, when considering large companies designing complex systems such as a helicopter manufacturer, first it appears critical to be able to adapt processes proposed by SE standardization according to the business specific needs. This tailoring must be guided in order to consider the inherent complexity of the organization, the various human actors' profiles and skills, tools and stakeholders involved in the design of new products. As they all have to communicate and interact efficiently together their abilities and capacities to be interoperable i.e. to really work together should be analysed and improved accordingly before going further. Then, it appears necessary to prepare the company for the required changes, and to deploy in situ the adopted SE processes taking into account not only company's classical constrains and objectives but also the current level of interoperability of its elements. Finally, company managers must become able to control and adjust these processes from the cradle to the grave according to feedbacks from their stakeholders. To support all these activities, Enterprise Modelling (EM) provides several techniques, modelling languages, reference models and interoperability assessment methods which have been adapted and applied in this research work. The purpose of this article is threefold: 1) to provide a state of the art in interoperability, Systems Engineering (SE), and EM to illustrate how these disciplines are interrelated, to identify the needs they imply in the deployment, to discuss lacks in existing works considering these needs and thus to formulate how we aim to meet them, 2) to present an approach based on EM helping companies to lead changes required to apply SE principles and aiming to promote interoperability; and 3) to introduce the modelling environment proposed to support the approach including an ontology, an extension of BPMN 2.0 and software tools

Interoperability Assessment in the Deployment of Technical Processes in Industry

6 pagesInternational audienceIncreasing competition on markets induces a vital need for companies to improve their efficiency and reactivity. For this, a solution is to deploy, improve and manage their processes while paying a special attention on the abilities of the resources involved. Particularly, the interoperability of the latter is considered in this article as a challenge conditioning the success of the deployment. Consequently, this paper presents a mean to assess interoperability of the resources involved in a process during all its life cycle

Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors

This work presents an analysis of Dark Current Random Telegraph Signal (DC-RTS) in CMOS Image Sensors (CIS). The objective is to provide new insight on RTS in modern CIS by determining the localization of DC-RTS centers and the oxide interfaces involved. It is shown that DC-RTS centers are located near the transfer gate. In particular, it is demonstrated that both gate oxide and Shallow Trench Isolation (STI) contribute to this parasitic dark current variation

In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image Sensors

Radiation-induced phenomena constitute a big concern for image sensors dedicated to space application. Particles(such as protons or electrons) can impact the crystalline structure of the detector and create switches in the dark response. This may be a problem, especially for calibration and so on image quality. This article aims at expressing the method used for switch detection and showing some properties of these Random Telegraph Signals (RTS), concerning, among other things, their amplitudes, discrete levels, and switching times. A first analysis of these results is also given

Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors

The total ionizing dose effects on image lag in pinned photodiode CMOS image sensors are investigated thanks to various device variants in order to isolate the major radiation induced effects on the charge transfer. It is shown that the main cause of the charge transfer degradation is the radiation induced defects generation in the pre-metal dielectric and in the transfer gate spacer vicinity which modifies the potential diagram at the photodiode/transfer gate interface by the creation of a potential pocket retaining the electrons that are not transferred. For 0.1 kGy(SiO2) 5 kGy(SiO2) the defects generated in the pre-metal dielectric influence the whole photodiode potential inducing a pinning voltage increase and degrading the charge transfer by enlarging the potential pocket effect which becomes the main image lag source. The reported results clarify the impact of ionizing radiation on the charge transfer suggesting radiation hardened by design solutions for future space or nuclear applications

Radiation Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Application

International audienceWe propose to identify the displacement damage defects induced by proton and carbon irradiations in a commercial off-the-shelf pinned photodiode (PPD) 8T-CMOS image sensors (CISs) dedicated to space application operating in global shutter mode. This paper aims to provide a better understanding of defects creation in a specific space image sensor. Therefore, it leads to comparable results to those we could find during the mission. The study focuses on bulk defects located in the PPD depleted region which represents the main dark current contribution in PPD CIS. Four sensors have been irradiated with carbon ions and protons at different energies and fluencies. Using both the dark current spectroscopy and the random telegraph signal (RTS) analysis, we investigate defects behavior for different isochronal annealing temperatures. By combining these results, we make the connection between two complementary phenomena and bring out the prevalence of divacancies-based defects in term of dark current contribution

Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors

In this work, several studies on Total Ionizing Dose effects on Pinned Photodiode CMOS images sensors are presented. More precisely, the evolution of a parasitic signal called Random Telegraph Signal is analysed through several photodiode designs. It is shown that the population of pixels exhibiting this fluctuation depends on the design variants. This population also increases in a different way with the dose: the effects are not same considering a low or high X-rays irradiation. Moreover, a statistical analysis is realized in order to better caracterize the defects responsible for RTS. It turns out that electric field enhancement signature can appear in some specific cases